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| PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 9.0 x 9.0 MILS 7.1 MILS 4.8 MILS DIAMETER Al - 30,000A Au - 12,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 139,050 PRINCIPAL DEVICE TYPES CMDD6263 CMKD6263 CMLD6263 Series CMOD6263 CMPD6263 SERIES CMSD6263 SERIES CMUD6263 Series 1N6263 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13 -February 2006) PROCESS CPD92V Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13 -February 2006) |
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